To further determine the bandgap of Y2O3 and IL, a detailed scan of O 1s was first performed at the same pass energy of 20 eV with an energy resolution of 1.0 eV. The energy loss spectrum of O 1s would provide the bandgap of Y2O3 and IL by taking into consideration the onset of a single particle excitation and band-to-band transition. Kraut’s method was utilized in the extraction of the valence band offset of Y2O3 and IL

[34, 35]. In order to fabricate MOS test structure, the Y2O3 film was selectively etched using HF/H2O (1:1) MK-2206 manufacturer solution. Next, a blanket of aluminum was evaporated on the Y2O3 film using a thermal evaporator (AUTO 306, Edwards). Lastly, an array of Al gate Pritelivir chemical structure electrode (area = 2.5 × 10−3 cm2) was defined using photolithography process. Figure 1 shows the fabricated Al/Y2O3/GaN-based MOS test structure. The current–voltage characteristics of the samples were measured using a computer-controlled semiconductor parameter analyzer (Agilent 4156C, Agilent Technologies, Santa Clara, CA, USA). Figure 1 Al/Y 2 O 3 /GaN MOS test structure. Results and discussion Bandgap (E g) values for Y2O3 and IL are extracted from the onset of the respective energy loss spectrum of O 1s core level peaks. The determination of E g values for Y2O3 and IL is done using a linear extrapolation method, wherein the segment of maximum negative slope

is extrapolated to the background level [36]. Figure

2a shows typical O 1s energy loss spectra of Y2O3 and IL for the sample annealed in O2 ambient. The extracted E g values are in the range of 4.07 Rebamipide to 4.97 TH-302 cost eV and 1.17 to 3.93 eV with a tolerance of 0.05 eV for Y2O3 and IL, respectively, for samples annealed in different post-deposition annealing ambients (Figure 3a). Figure 2 XPS O 1 s energy loss and valence band photoelectron spectrum. (a) Typical XPS O 1s energy loss spectrum of Y2O3 and interfacial layer for the sample annealed in O2 ambient. (b) Typical valence band spectrum of Y2O3 and interfacial layer for the sample annealed in O2 ambient. Figure 3 Bandgap and valence band offset of Y 2 O 3 and interfacial layer. (a) Bandgap of Y2O3 and IL for the sample annealed in different ambients. (b) Valence band offset of Y2O3/GaN and IL/GaN as a function of post-deposition annealing ambient. Typical valence band photoelectron spectra of Y2O3 and IL for the sample annealed in O2 ambient are presented in Figure 2b. By means of linear extrapolation method, the valence band edges (E v) of Y2O3 and IL could be determined by extrapolating the maximum negative slope to the minimum horizontal baseline [36]. The acquired valence band offset (ΔE v) values of Y2O3 and IL with respect to GaN substrate are in the range of −0.04 to −1.43 eV and −0.21 to −3.23 eV with a tolerance of 0.05 eV, respectively, for all of the investigated samples.