Authors’ contributions SHC carried out the preparation of AuNPs, AgMSs, AgMSs@GNPs assembly, Raman and XRD, characterization, drafted the manuscript, PH modified the draft of manuscript, ZHW carried out the UV and SEM Characterization. ZW checked the manuscript grammar. MS participated

click here in the analysis of Raman results. GN gave many advices for this manuscript. DXC and XYC designed of the study and guided this work. All authors read and approved the final manuscript.”
“Background Atomic layer deposition (ALD) facilitates the deposition of a dielectric oxide onto a GaAs surface. The process differs from the one used for the deposition of ALD oxide on Si, where an OH group on the semiconductor is required to initiate the deposition. Bonding of the oxide on the III-V semiconductor is accessible to investigation with high-resolution synchrotron radiation photoemission. It provides unprecedented, precise information about the interfacial electronic structure. This information is vital because the interfacial trap density (D it) governs the performance of selleck chemicals GaAs-based devices. In order to obtain consistent information, the III-V surface must be free of impurities, such as oxygen, and other defects prior to the ALD process. Only when this condition is satisfied will the true interfacial electronic structure be revealed. The attempt to DZNeP chemical structure prepare a

clean GaAs(001) surface has generally been patterned on the procedure used to obtain a clean Si(001) surface. That neglects the fundamental difference Sclareol between the surface properties and reconstruction of a III-V semiconductor and an elemental one like Si. The reconstructed Si(001)-2 × 1 surface consists of rows of buckled dimers, with charge transfer between the tilted

atoms, and is rich in dangling bonds that trap impurities. Surface pretreatment is required prior to a final anneal in an ultra-high-vacuum end station prior to synchrotron radiation photoemission (SRPES) measurements. The pretreatment due to Ishizaka and Shiraki [1] has come into general use. It leaves a thin oxide film on a clean Si surface that is readily removed by annealing in vacuum [2, 3]. The effectiveness of this procedure has been demonstrated in [2], which shows the analysis of 2p core-level data from a clean reconstructed Si(001) surface. The photoemission spectra from the first three surface layers labeled S(0), S(1), and S(2) are identified and have intensities consistent with the expected escape depth. For multi-element (In)GaAs, a common method of surface pretreatment prior to in-vacuum annealing is As capping [4] by thermal annealing in As2 flux [5], followed by a chemical rinse [6]. Subsequent in-vacuum annealing of these samples removes the more volatile As and produces an oxygen-free surface, but one that does not have the desired surface Ga/As ratio. It turns out to be low, say 0.73 [4], compared with an untreated sample, say 1.26 (not shown).