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Authors’ contributions QPS and SML carried out the fabrication of samples and the AFM and LSCM measurements and drafted the manuscript. XHL carried out the immunoassays. HYJ performed the molecular genetic studies and participated in the sequence alignment. Selleck HDAC inhibitor JYC, LXZ, and LF initiated, planned, and controlled the research process. All authors read and approved the final manuscript.”
“Background Since flexible electronic system (FES) appeals to be light, convenient, has conformal contingence

with the crooked surface, and excellent interfaces with humans, it ought to be a prospective existing form of electronic product to substitute its clumsy predecessors manufactured and packaged by traditional bulk silicon technology [1, 2]. Up to now, multifarious electronic components, such as integrated circuits (ICs) [3, 4], active matrix organic light-emitting diodes [5], sensors [6], radiofrequency identification antennas [7], and solar cells [8, 9], have been fabricated on flexible Ribonuclease T1 substrates and are delved by many researchers. As we know, among all the components used in ICs, good and reliable memories [10, 11] will maximize the functionality of ICs, and it is also important for the FES. Among all the memories, nonvolatile resistive random access memory (RRAM) is the most promising candidate because of its low power consumption,

high speed, simple structure, and high packaging density, compared with its counterparts such as flash memory and DRAM [12–14]. Currently, oxides, such as STO [15], HfO2[16], NiO [17], Al2O3[18], ZnO [19], and GO [20], have received much interest in resistive switching research. Among the oxides mentioned, HfO2 has been profoundly studied and contains great potentiality to be put into applications. However, the application of HfO2-based RRAM on flexible substrate is still rare. In recent years, atomic layer deposition (ALD) has emerged as a new technique for depositing films, particularly for fabricating oxide films. Owing to its self-limiting mechanism during the process, excellent step coverage and conformal thickness of the film can be achieved [21].